Datasheet - 3sk41

By varying the DC bias voltage applied to Gate 2, you can seamlessly control the overall gain of the amplifier stage without heavily detuning the input tank circuit attached to Gate 1. Common Applications

The is a classic, high-performance N-channel dual-gate MOSFET packaged in a specialized metallic CAN-4 (TO-72) housing . Sourced over the years by major semiconductor pioneers like NEC, Hitachi, and Motorola , this discrete transistor is highly optimized for radio frequency (RF) amplification, mixing, and high-speed switching applications.

Due to its high-speed switching capabilities, low noise figure, and linear transfer traits, the 3SK41 is commonly found in:

): The capacitance looking into Gate 1, typically around 1.2 pF. Low input capacitance simplifies matching network design at UHF. Reverse Transfer Capacitance ( Crsscap C sub r s s end-sub 3sk41 datasheet

Found in legacy cellular base stations, marine radios, and amateur radio equipment.

In RF receivers, one gate can be used for the signal input while the second gate handles an AGC voltage. This allows the circuit to dynamically adjust gain based on signal strength without detuning the input. Mixing Capabilities:

Excellent vintage alternative tailored specifically for RF preamplifiers. SOT-143 (SMD) By varying the DC bias voltage applied to

Furthermore, the datasheet highlights a growing crisis in the "Right to Repair" movement. For vintage audiovisual enthusiasts and archivists, the 3SK41 is a critical component. When a vintage Sony Trinitron from the 1980s fails to pick up a signal, it is often this small, metal-can transistor that has failed. The datasheet provides the necessary "pinout" and replacement specifications, allowing a modern engineer to hunt for a modern equivalent (like the BF998) to keep the antique running. Without the datasheet, the device is a black box; with it, the device can be understood, reverse-engineered, and potentially revived.

If you can provide more details about the component, such as:

made it incredibly efficient for power management in compact designs. Due to its high-speed switching capabilities, low noise

– The control gate, usually used for Automatic Gain Control (AGC) or local oscillator (LO) injection. Pin 4: Gate 1 (G1) – The primary RF signal input gate. 3. Absolute Maximum Ratings

Used in VCO (Voltage-Controlled Oscillator) and PLL (Phase-Locked Loop) circuits. Security & Signal Systems:

By shifting the AGC bias voltage on Gate 2, engineers can dynamically control the amplifier's gain across a wide dynamic range without shifting the input impedance of Gate 1. This keeps the receiver's tuned circuits from detuning as the signal strength fluctuates.

N-Channel Silicon Dual-Gate MOS Field-Effect Transistor Gate-Source Breakdown Voltage (